Description
5SHY4045L0006 3BHB030310R0001
Product Name: ABB 5SHY4045L0006 3BHB030310R0001 IGCT Power Semiconductor Module (Integrated Gate Converter Thyristor)
Brand: ABB
Series: 5SHY series HPT+IGCT (high-power technology enhanced type)

ABB IGCT 5SHY4045L0006 3BHB030310R0001 IGBT Module
Product type: High power thyristor/IGBT power semiconductor module, including integrated gate driver circuit
Core function: As the core power switching device of medium and high voltage high-power power electronic systems, it is responsible for converting DC bus voltage into controllable high-voltage AC output, driving large motors or grid connection. IGCT combines the high voltage resistance and low conduction loss characteristics of thyristors with the fast turn off capability of transistors, making it suitable for medium to high voltage applications ranging from several MVA to several hundred MVA. This model is the HPT+series. Compared with the previous generation HPT-IGCT, it further reduces the turn off loss by optimizing the ripple P-based doping distribution and improving the metallization process. It has a wider safe operating area (SOA) at 140 ° C and is one of the strongest 4.5kV grades in ABB’s current IGCT product line.
Supporting gate drive circuit: 3BHE039203R0101 GVC736CE101 (the drive board is used in conjunction with the IGCT module and cannot be replaced separately. In case of malfunction, the entire component needs to be replaced)
Key electrical parameters:
Rated voltage: 4500V (4.5kV)
Controllable shutdown current: 91A (ITGQM, VD=2800V, Tj=125 ° C)
On state voltage drop: less than 1.8V (@ 91A)
Opening delay time (td (on)): approximately 3.5 μ s (VD=2800V, IT=91A)
Turn off delay time (td (off)): approximately 7 μ s (VD=2800V, ITGQ=91A)
Opening energy (Eon): approximately 1.5J/pulse
Turn off energy (Eoff): approximately 22J/pulse
Critical current rise rate (diT/dt): 1000A/μ s
Maximum junction temperature: 140 ° C (unique advantage of HPT+series)
Chip diameter: 91mm (ABB’s new generation large diameter IGCT)
Technical features:
Integrated reverse conducting diode, multi cathode unit structure, simplified parallel design, no need for voltage equalization circuit
Gate hard drive technology, completes current transfer within 1 μ s, reduces turn off loss by about 40% compared to traditional GTO
Wave P-base doping optimization significantly expands the safe working area and enhances the shutdown capability at high temperatures
Improvement of metallization process to enhance thermal mechanical wear resistance and extend service life
Pressure pack packaging design, double-sided heat dissipation, easy installation and maintenance
Can significantly reduce or ignore absorption circuit and inverter losses
Support dual module parallel redundant operation, with automatic fault switching time less than 50 μ s
Built in fiber optic driver interface, supporting CANopen and IEC 61850 protocols
Physical and environmental parameters:
Working temperature range: -40 ° C to+125 ° C (junction temperature can reach 140 ° C)
Protection level: IP20 (module level)
Weight: Approximately 2.9kg
Installation method: Modular installation, compatible with ABB ACS6000 and other high-voltage inverter cabinets
Origin: Sweden
Typical application scenarios:
High voltage frequency converter (ACS6000 series): power plant boiler fan, water pump, mine crusher, steel rolling main drive
High voltage direct current transmission (HVDC): offshore platform grid access, long-distance transmission
Large industrial motor drive: metallurgical arc furnace, rail transit traction inverter
Wind power converter: grid connected wind turbines above 10MW level
Active rectifier (ARU): 6-pulse, 3-level voltage source inverter topology
Ship propulsion system
Related models in the same series:
5SHY4045L0003 3BHB021400R0001:4000A/4500V, Supporting GVC736BE101 driver board (HPT series)
5SHY4045L0004 3BHB02141R0001: 4000A/4500V, HPT series
5SHY3545L0010 3BHB013088R0001: 3500A grade, matched with GVC750BE101 driver
5SHY3545L0014 3BHB013085R00011:3500A grade, matched with GVC736CE101 driver
5SHY5045L0020:5000A grade
5SHY6545L0001: 6500A grade
5SHX1445H0001/H0002: IGCT modules of the same series but different specifications
Compared with 5SHY4045L0001 (3BHB018162R0001): 5SHY4045L0006 is an updated generation HPT+product, with a chip diameter upgraded from 76mm to 91mm, lower turn off loss, wider 140 ° C high-temperature safe working area, and overall performance better than L0001 version. It is the main power module of 4.5kV level in the current ACS6000 system.

